Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-04-24
1993-05-11
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257292, 257443, 257446, 2502081, 307311, H01L 2714
Patent
active
052104346
ABSTRACT:
A photoelectric converter comprising a photosensor element, a typical example of the photosensor element comprising: a transistor including an n or n.sup.+ collector region an n.sup.- region disposed contiguous to the collector region, a p base region disposed contiguous to the n.sup.- region, an n.sup.+ emitter region disposed contiguous to the base region, and a first electrode connected to the emitter region; and a storage capacitor constituted by the base region, an electrically insulating region disposed contiguous to the base region, and a second electrode connected to the electrically insulating region; Whereby the base region is held in a floating state. A photogenerated charge is stored in the base region by controlling the potential of the base region and an electric signal corresponding to the charge stored in the base region is subsequently output from the first electrode.
REFERENCES:
patent: 3624428 (1971-11-01), Weimer et al.
patent: 3919469 (1975-11-01), Kasperkovitz
patent: 4575638 (1986-03-01), Okumura
patent: 4631592 (1986-12-01), Nishizawa
Nishizawa et al., "SIT (Static Induction Transistor) and Its Application to Imaging Devices", Television Society of Japan, Technical Report, ED 590, Aug. 28, 1981, p. 57.
Ohmi Tadahiro
Tanaka Nobuyoshi
Canon Kabushiki Kaisha
Mintel William
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