Photoelectric conversion layer stack type color solid-state...

Details Photoelectric conversion layer stack type color solid-state... Photoelectric conversion layer stack type color solid-state...

2006-03-23

2009-06-23

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257SE27135

Reexamination Certificate

active

07550797

ABSTRACT:
A color solid-state image sensing device comprising unit cells arranged two-dimensionally in a surface of a silicon substrate, each unit cell including a blue pixel provided as defined herein, a red pixel as defined herein and a green pixel as defined herein, wherein the relation P≧W holds when W is a distance between the position of the center of gravity in a sensitivity distribution of the green pixel and the position of the center of gravity in a sensitivity distribution of the red pixel, and P is a pitch of arrangement of the unit cells.

REFERENCES:
patent: 7129466 (2006-10-01), Iwasaki
patent: 7230226 (2007-06-01), Inuiya
patent: 7335869 (2008-02-01), Kochi
patent: 2003/0071271 (2003-04-01), Suzuki et al.
patent: 2003/0209651 (2003-11-01), Iwasaki
patent: 2002-83946 (2002-03-01), None
patent: WO 99/39372 (1999-08-01), None
patent: WO 99/56097 (1999-11-01), None

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