Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-22
2008-04-22
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S403000
Reexamination Certificate
active
07361947
ABSTRACT:
A photoelectric conversion element includes a semiconductor layer including a pair of p+regions in which p-type impurities are doped, and a p−region which is disposed between the p+regions and has a lower p-type impurity concentration than the p+regions. A gate electrode is formed over the p−region via a gate insulation film, thus, a p-MOS structure is formed. A width of the gate electrode is less than a width of the p−region. A p−region, which is a portion of the p−region and is located immediately below the gate electrode, forms a light receiving layer, and p−regions, which are portions of the p−region and are located away from below the gate electrode, form LDD regions. The photoelectric conversion element is fabricated on the same substrate as a thin-film transistor for a driving circuit, thereby constructing a display device with an input function.
REFERENCES:
patent: 4598305 (1986-07-01), Chiang et al.
patent: 7265740 (2007-09-01), Tada et al.
patent: 2004-119719 (2004-04-01), None
patent: 2004-159273 (2004-06-01), None
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Prenty Mark V.
Toshiba Matsushita Display Technology Co., Ltd.
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