Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-29
2008-01-29
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S233000, C257S239000, C257S291000, C257S292000
Reexamination Certificate
active
11003444
ABSTRACT:
A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship:in-line-formulae description="In-line Formulae" end="lead"?C2<C3<C1.in-line-formulae description="In-line Formulae" end="tail"?
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Chinese Official Communication Dated Nov. 5, 2003 Regarding Chinese Patent Application No. 2004101007057.
Ichikawa Takeshi
Mishima Ryuichi
Tamura Seiichi
Watanabe Takanori
Yuzurihara Hiroshi
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Liu Benjamin Tzu-Hung
Tran Minhloan
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