Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-29
2008-01-29
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S233000, C257S239000, C257S291000, C257S292000
Reexamination Certificate
active
07323731
ABSTRACT:
A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship:in-line-formulae description="In-line Formulae" end="lead"?C2<C3<C1.in-line-formulae description="In-line Formulae" end="tail"?
REFERENCES:
patent: 4142200 (1979-02-01), Mizushima et al.
patent: 4268845 (1981-05-01), Koike et al.
patent: 5201681 (1993-04-01), Okunuki et al.
patent: 5361015 (1994-11-01), Okunuki et al.
patent: 5428237 (1995-06-01), Yuzurihara et al.
patent: 5458755 (1995-10-01), Fujiyama et al.
patent: 5466961 (1995-11-01), Kikuchi et al.
patent: 5561317 (1996-10-01), Momma et al.
patent: 5598037 (1997-01-01), Kikuchi et al.
patent: 5612230 (1997-03-01), Yuzurihara et al.
patent: 5693959 (1997-12-01), Inoue et al.
patent: 5700719 (1997-12-01), Yuzurihara et al.
patent: 5731131 (1998-03-01), Momma et al.
patent: 5898195 (1999-04-01), Harada
patent: 5903043 (1999-05-01), Ichikawa et al.
patent: 5918115 (1999-06-01), Kikuchi et al.
patent: 6049235 (2000-04-01), Ichikawa et al.
patent: 6373099 (2002-04-01), Kikuchi et al.
patent: 6483129 (2002-11-01), Rhodes et al.
patent: 6504194 (2003-01-01), Miida
patent: 2001/0000623 (2001-05-01), Nozaki et al.
patent: 2003/0085399 (2003-05-01), Inagaki
patent: 2003/0202114 (2003-10-01), Takizawa et al.
patent: 1453628 (2003-11-01), None
patent: 3-159172 (1991-07-01), None
patent: 6-297369 (1994-10-01), None
Chinese Official Communication Dated Nov. 5, 2003 Regarding Chinese Patent Application No. 2004101007057.
Ichikawa Takeshi
Mishima Ryuichi
Tamura Seiichi
Watanabe Takanori
Yuzurihara Hiroshi
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Liu Benjamin Tzu-Hung
Tran Minhloan
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