Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-10-27
2010-06-22
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S459000, C257SE31047, C257SE31061
Reexamination Certificate
active
07741690
ABSTRACT:
A photoelectric conversion device includes an intrinsic semiconductor layer, a first conductive type semiconductor layer disposed on a first side of the intrinsic semiconductor layer, and a second conductive type semiconductor layer disposed on a second side of the intrinsic semiconductor layer opposite the first side. The intrinsic semiconductor layer includes an amorphous semiconductor layer and a crystalline semiconductor layer including a plurality of crystals. A diameter of a crystal of the plurality of crystals is equal to or less than approximately 100 angstroms.
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Choo Dae-Ho
Kim Dong-Cheol
Cantor & Colburn LLP
Ngo Ngan
Samsung Electronics Co,. Ltd.
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