Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-12-21
2010-10-19
Zarneke, David A (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S260000, C257SE31110, C257SE31117
Reexamination Certificate
active
07816749
ABSTRACT:
A plurality of line image sensor ICs110are formed to be arranged in X, Y directions with gaps therebetween on a semiconductor substrate101. The gaps between the line image sensor ICs110become scribe lines102X,102Y. A pattern of dummy interconnects120is formed in a region where a short side110S of an arbitrary line image sensor IC110is opposed to a short side110S of another line image sensor IC110adjacent to the arbitrary line image sensor IC110in the X direction in a region where the scribe line102Y is formed. When a material gas is generated by plasma CVD, the material gas is uniformly deposited not only on the line image sensor ICs110, but also on the dummy interconnects120. Consequently, a protective film with a uniform thickness can be formed on the line image sensor ICs110.
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Mimuro Yoichi
Omi Toshihiko
Brinks Hofer Gilson & Lione
Seiko Instruments Inc.
Zarneke David A
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