Semiconductor device manufacturing: process – Gettering of substrate – By layers which are coated – contacted – or diffused
Patent
1997-07-09
2000-10-17
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Gettering of substrate
By layers which are coated, contacted, or diffused
438471, 438764, H01L 21322
Patent
active
061331198
ABSTRACT:
Catalytic elements such as Ni are intentionally combined with defects that remain inside of a semiconductor substrate or thin film so that the energy state of the defects comes to a stable state. In this state, a heat treatment is conducted in an atmosphere containing halogen element or XV element, and gettering is conducted in such a manner that the catalytic element is taken in an oxide film. The bonds which are divided by separating the catalytic element are recombined through a heat treatment, thereby being capable of improving crystalline property of the semiconductor substrate or thin film remarkably.
REFERENCES:
patent: 4561171 (1985-12-01), Shlosser
patent: 5085711 (1992-02-01), Iwamoto et al.
patent: 5089441 (1992-02-01), Moslehi
patent: 5225355 (1993-07-01), Sugino et al.
patent: 5244819 (1993-09-01), Jue
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5380372 (1995-01-01), Campe et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5422302 (1995-06-01), Yonehara et al.
patent: 5426061 (1995-06-01), Sopori
patent: 5426064 (1995-06-01), Zhang et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5488000 (1996-01-01), Zhang et al.
patent: 5492843 (1996-02-01), Adachi et al.
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5508533 (1996-04-01), Takemura
patent: 5527718 (1996-06-01), Seita et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5534716 (1996-07-01), Takemura
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5563426 (1996-10-01), Zhang et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5569936 (1996-10-01), Zhang et al.
patent: 5580792 (1996-12-01), Zhang et al.
patent: 5585291 (1996-12-01), Ohtani et al.
patent: 5589694 (1996-12-01), Takayama et al.
patent: 5595923 (1997-01-01), Zhang et al.
patent: 5595944 (1997-01-01), Zhang et al.
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5605846 (1997-02-01), Ohtani et al.
patent: 5606179 (1997-02-01), Yamazaki et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5614426 (1997-03-01), Funada et al.
patent: 5614733 (1997-03-01), Zhang et al.
patent: 5616506 (1997-04-01), Takemura
patent: 5620910 (1995-06-01), Teramoto
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5624851 (1997-04-01), Takayama et al.
patent: 5637515 (1997-06-01), Takemura
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5646424 (1997-07-01), Zhang et al.
patent: 5654203 (1997-08-01), Ohtani et al.
patent: 5656825 (1997-08-01), Kusumoto et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5700333 (1997-12-01), Yamazaki et al.
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 5869363 (1999-02-01), Yamazaki et al.
patent: 5985740 (1999-11-01), Yamazaki et al.
patent: 6048758 (2000-04-01), Yamazaki et al.
Stanley Wolf et al. Silicon Processing for the VLSI Era, vol. 1: Process Technology, pp. 61-70, Feb. 1996.
Z. Li et al. "Gettering in High Resistive Float Zone Silicon Wafers For Silicon Detector Applicatons", IEEE, pp. 290-294, Feb. 1989.
A. Rohatgi et al. "Investigation of the Effects of Aluminum Treatment on Silicon Solar Cells", IEEE, pp. 52-57, Jan. 1993.
W. Skorupa et al. "Heavy Metal Gettering in Buried Nitride Silicon-on-Insulator Structures", Electroonic Letters, pp. 464-465, Apr. 1988.
Ghandhi "VLSI Fabrication Principles", pp. 587-588, Jul. 1984.
Guerrero Maria
Jr. Carl Whitehead
Semiconductor Energy Laboratory Co,. Ltd.
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