Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-09-02
2008-09-02
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S233000, C257S292000, C257S432000, C257S435000, C257SE31121
Reexamination Certificate
active
11253583
ABSTRACT:
A photoelectric conversion device is provided which is capable of improving the light condensation efficiency without substantially decreasing the sensitivity. The photoelectric conversion device has a first pattern provided above an element isolation region formed between adjacent two photoelectric conversion elements, a second pattern provided above the element isolation region and above the first pattern, and microlenses provided above the photoelectric conversion elements with the first and the second patterns provided therebetween. The photoelectric conversion device further has convex-shaped interlayer lenses in optical paths between the photoelectric conversion elements and the microlenses, the peak of each convex shape projecting in the direction from the electro-optical element to the microlens.
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Chinese Office Action dated Mar. 16, 2007 issued in counterpart application No. 200410047278.0.
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Pert Evan
Rodela Eduardo A
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