Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-05-26
2000-11-21
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257444, H01L 3106
Patent
active
061506826
ABSTRACT:
An image sensor having a plurality of photodetectors and a source follower, storing photo-charges generated by the photodetectors in gate of a MOS transistor and outputting voltage signals converted from the photo-charges, integrally formed on a single semiconductor substrate. The source follower is configured with p-channel MOS transistors to restrain generation of stray carrier. Further, the p-channel MOS transistor of the source follower on the power source side is formed on an n-type well whose impurity concentration is higher than that of an n-type semiconductor substrate where the p-channel MOS transistor on the ground side is formed. In this configuration, the absolute value of the threshold voltage of the p-channel MOS transistor on the ground side becomes lower than that of the p-channel MOS transistor on the power source side, thus gain of the source follower is increased.
REFERENCES:
patent: 5614744 (1997-03-01), Merrill
patent: 5767902 (1998-06-01), Koyama
patent: 5844238 (1998-12-01), Sauer et al.
patent: 5880691 (1999-03-01), Fossum et al.
patent: 5933190 (1999-08-01), Dierickx et al.
Kozuka Hiraku
Sawada Koji
Canon Kabushiki Kaisha
Hardy David
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