Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-24
2010-06-15
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S444000, C257SE27132, C257SE31083
Reexamination Certificate
active
07737478
ABSTRACT:
An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage Voutgenerated at the gate terminal of the MOS transistor is detected in accordance with a current Ipwhich is generated at the photoelectric conversion element. The voltage Voutgenerated at the gate terminal of the MOS transistor can be directly detected, so that the range of output can be widened than a method in which an output voltage is converted into a current by connecting a load resistor, and so on.
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PCT Invitation to Pay Additional Fees (PCT Applicatin No. PCT/JP2008/055173), 3 pages, mailed Apr. 22, 2008.
PCT Invitation to Pay Additional Fees (PCT Application No. PCT/JP2008/055173), International Searching Authority, 3 pages, mailed Apr. 22, 2008.
Hirose Atsushi
Yanagisawa Makoto
Fish & Richardson P.C.
Mandala Victor A
Moore Whitney
Semiconductor Energy Laboratory Co,. Ltd.
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