Photodiode with self-aligned implants for high quantum...

Details Photodiode with self-aligned implants for high quantum... Photodiode with self-aligned implants for high quantum...

2006-12-12

2010-06-29

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S435000, C257S462000

Reexamination Certificate

active

07745858

ABSTRACT:
A pinned photodiode with a pinned surface layer formed by a self-aligned angled implant is disclosed. The angle of the implant may be tailored to provide an adequate offset between the pinned surface layer and an electrically active area of a transfer gate of the pixel sensor cell. The pinned surface layer is formed by employing the same mask level as the one employed for the formation of the photodiode region, and then implanting dopants at angles other than zero degrees.

REFERENCES:
patent: 6177293 (2001-01-01), Netzer et al.
patent: 2004/0201072 (2004-10-01), Rhodes
patent: 2005/0230721 (2005-10-01), Patrick
patent: 2008/0102551 (2008-05-01), Park et al.

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