Photodiode having transparent insulating film around gate island

Details Photodiode having transparent insulating film around gate island Photodiode having transparent insulating film around gate island

1999-06-01

2000-07-18

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257233, 257234, 257432, H01L 31062, H01L 31113

Patent

active

060910933

ABSTRACT:
An embodiment of the invention is directed to a semiconductor photodiode made of a number of gate islands being spaced from each other and electrically insulated from each other by spacers. The spacers are formed above a p-n junction of the photodiode. The incident light is detected after it passes through the spacers and into a photosensitive region of the photodiode. The photodiode can be built using conventional metal oxide semiconductor (MOS) processes of the polysilicon-silicided gate or self-aligned types that use a lower doped drain (LDD) structure, without requiring an additional mask step that prevents the formation of the opaque silicide above the photosensitive semiconductor regions.

REFERENCES:
patent: 4677453 (1987-06-01), Matsumoto et al.
patent: 4901129 (1990-02-01), Hynecek
patent: 5479049 (1995-12-01), Aoki et al.
patent: 5705837 (1998-01-01), Tanigawa et al.
patent: 5920092 (1999-07-01), Watanabe

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