Photodiode having three doped regions, photodetector...

Details Photodiode having three doped regions, photodetector... Photodiode having three doped regions, photodetector...

2006-12-19

2006-12-19

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257SE27133

Reexamination Certificate

active

07151286

ABSTRACT:
A photodiode comprises three superposed doped regions, namely a first doped region adjacent to a surface (S) of a semiconductor substrate, an intermediate second doped region and a third doped region in contact with the bulk of the substrate. The bulk of the substrate and the second doped region form first and second electrodes of the photodiode, respectively. The photodiode furthermore includes a third electrode in contact with the first doped region. The third electrode comprises an intermediate portion of a first electrically conducting material, placed in contact with the first doped region, and an external connection portion of a second electrically conducting material, placed in contact with the intermediate portion.

REFERENCES:
patent: 3532945 (1970-10-01), Weckler
patent: 4520381 (1985-05-01), Moriguchi et al.
patent: 5113076 (1992-05-01), Schulte
patent: 5892253 (1999-04-01), Merrill
patent: 2005/0051702 (2005-03-01), Hong et al.
patent: 2005/0202584 (2005-09-01), Mouli

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