Photodiode having extended well region

Details Photodiode having extended well region Photodiode having extended well region

2007-02-06

2007-02-06

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000

Reexamination Certificate

active

11350296

ABSTRACT:
A semiconductor imager structure having a photodiode being provided as a well region formed within a substrate layer and a transistor electrically connected to the photodiode and having a terminal that has a same electrical potential as the photodiode. The well region of the photodiode having an extended portion so that at least a portion of the terminal of the transistor has the same electrical potential as the photodiode is formed within the extended portion of the well region of the photodiode.

REFERENCES:
patent: 6232626 (2001-05-01), Rhodes
patent: 6350663 (2002-02-01), Kopley et al.
patent: 6504195 (2003-01-01), Guidash
patent: 6965102 (2005-11-01), Merrill

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