Photodiode having charge transfer function and image sensor usin

Details Photodiode having charge transfer function and image sensor usin Photodiode having charge transfer function and image sensor usin

1999-06-29

2000-07-04

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257290, 257291, 257463, H01L 31062, H01L 31113

Patent

active

060842598

ABSTRACT:
The present invention relates to an image sensor; and, more particularly, to a CMOS image sensor employing photodiodes which linearly increase the ability of keeping up photogenerated charges. In accordance with the present invention, a unit pixel of a CMOS image sensor comprises: a photodiode including: a) an N-type semiconductor region and a P-type semiconductor region for a PN junction to which a reverse bias is applied; and b) a highly doped region formed on one of the N-type semiconductor region and the P-type semiconductor region for collecting carriers of electron-hole pairs generated in a depletion region of the PN junction so that a voltage drop of the reverse bias is linear; and an image data processing unit for producing an image data in response to the carriers transferred from the highly doped region.

REFERENCES:
patent: 4984047 (1991-01-01), Stevens
patent: 5051797 (1991-09-01), Erhardt
patent: 5721415 (1998-02-01), Fortmann et al.
patent: 5841159 (1998-11-01), Lee et al.
patent: 5880495 (1999-03-01), Chen
patent: 5977576 (1999-11-01), Hamasaki
patent: 6023081 (2000-02-01), Drowley et al.

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