Photodiode for ultra high speed optical communication and...

Details Photodiode for ultra high speed optical communication and... Photodiode for ultra high speed optical communication and...

2005-01-11

2005-01-11

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S292000, C257S200000, C257S233000, C257S461000

Reexamination Certificate

active

06841814

ABSTRACT:
Disclosed is a photodiode having a p-type electrode of a mushroom shape. The p-type electrode is formed in a mushroom shape, so that the contact area faced by the spreading region of a dopant for the photodiode and the electrode can be minimized and the capacitance of the photodiode can be reduced. Further, the p-type electrode is configured to have a broader width in its upper end, thus allowing the wire bonding to be performed easily.

REFERENCES:
patent: 6605831 (2003-08-01), Inai et al.
patent: 20020100911 (2002-08-01), Arakawa et al.
patent: 20020110945 (2002-08-01), Kuramata et al.
patent: 20030047791 (2003-03-01), Flynn et al.
patent: 3-163822 (1989-11-01), None

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