Stock material or miscellaneous articles – Composite – Of inorganic material
Reexamination Certificate
2002-12-10
2004-08-24
Turner, Archene (Department: 1771)
Stock material or miscellaneous articles
Composite
Of inorganic material
C257S233000, C257S153000, C257S091000
Reexamination Certificate
active
06780532
ABSTRACT:
CLAIM OF PRIORITY
This application claims priority to an application entitled “PHOTODIODE DETECTOR AND FABRICATION METHOD THEREOF,” filed in the Korean Industrial Property Office on Jan. 8, 2002 and assigned Serial No. 02-958, the contents of which are hereby incorporated by reference.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a photodiode detector and, particularly, to a photodiode detector for receiving light and converting the same into an electrical signal in an optical communication system.
2. Description of the Related Art
A photodiode having InGaAs/InP elements in series to form a photoelectron integration circuit is useful in the applications of signals for transmission in a long wavelength region ranging from 1.3 &mgr;m to 1.5 &mgr;m. The development of the optical communication system is growing fast as optical components (i.e., the photodiode) responsible for a faster data transmission, more bandwidth and noise determining capability have been improved. The bandwidth is defined as a wavelength(Hz) measured in a middle point of the maximum signal transmitted in the optical communication system. Such bandwidth is greatly influenced by capacitance and resistance effects. As all optical elements are made on a small scale, the influence on the bandwidth by the resistance effect is negligible. Therefore, the capacitance effect become a relatively important factor in influencing the transmission speed.
FIG. 1
is a vertical cross-sectional view illustrating a photodiode detector according to an embodiment of a related art. In particular, a photodiode detector with a mesa structure is shown.
As shown in
FIG. 1
, the conventional photodiode detector includes an InP substrate
3
, a u-InGaAs absorption layer
2
, a P-InP layer
1
stacked in series, and a SiNx film
4
used for insulation. Note that the P-InP layer
1
and the u-InGaAs absorption layer
2
are etched when forming the detector circuit. Further, a P-metal layer
5
is stacked on the upper portion of the P-InP layer
1
, and an N-metal layer
6
together with a SiNx non-reflection layer
7
is deposited on a lower portion of the InP substrate
3
.
The foregoing mesa structure grows the P-InP layer
1
using a single crystal growth process without the need for diffusing the operation. Therefore, the process of manufacturing the mesa structure tend to be simple. However, the P-InP layer and the u-InGaAs layer must be etched and thus exposed to the atmosphere during the manufacturing process, and also joins to the SiNx, insulation film. As such, if the InGaAs film having a small energy band gap is utilized, a current leakage is increased, thereby deteriorating the reliability of the photodiode detector.
SUMMARY OF THE INVENTION
The present invention overcomes the above-described problems, and provides additional advantages, by providing a photodiode detector and its related fabrication method without using the etching process for a single crystal of a diode in order to maximally suppress the current leakage.
A further aspect of the present invention is to provide a planar-type photodiode detector and fabrication method thereof, which is capable of receiving high speed signals.
According to another aspect of the invention, a planar type photodiode detector includes: an InP substrate; an u-In.sub.0.53Ga.sub.0.47As layer grown and stacked on the InP substrate; an InP layer stacked on the upper portion of the u-In.sub.0.53Ga.sub.0.47As layer; a SiNx insulation layer stacked on the upper portion of the u-InP layer; an additional insulation layer stacked on the upper portion of the SiNx insulation layer; a P-InP layer formed by Zn diffusing on the u-InP layer portion below an opening formed on a predetermined position between the additional insulation layer and the SiNx insulation layer; a P-metal layer positioned on an upper portion of the additional insulation layer; and, an N-metal layer formed on the lower portion of the InP substrate together with a non-reflection layer.
REFERENCES:
patent: 6554912 (2003-04-01), Sahbari
patent: 2003/0047791 (2003-03-01), Flynn et al.
Tuck, B., “Interaction of p-type dopants during diffusion in InP”, Semiconductor Science and Technology, 15 No 3 Mar. 2000 254-258.*
Nelson, A.W., “A study of p-type dopants for InP grown by adduct MOVPE”, Journal of Crystal Growth, vol. 68, Issue 1, Sep. 1984, 102-110.
Baek Jea-Myung
Yang Seung-Kee
Cha & Reiter, LLC.
Samsung Electronics Co,. Ltd.
Sperty A B
Turner Archene
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