Photodiode being monolithically integrated onto a waveguide

Details Photodiode being monolithically integrated onto a waveguide Photodiode being monolithically integrated onto a waveguide

2011-01-11

2011-01-11

Arora, Ajay K (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S461000, C257SE31127, C438S048000

Reexamination Certificate

active

07868406

ABSTRACT:
A waveguide-integrated photodiode for high bandwidths with a semi-insulating monomode supply waveguide monolithically integrated on a substrate, together with an overlying photodiode mesa structure having an electroconducting n-contact layer, an absorption layer, a p+-contact layer and a metallic p-contact, the refraction index of the n-contact layer being greater than the refraction index of the semi-insulating waveguide layer. Lengthening the n-contact layer by a predetermined length L in the direction of the supply waveguide in relation to the overlying layers correspondingly increases at least one factor of the product of quantum efficiency and bandwidth.

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