Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-01-18
2005-01-18
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S225000, C257S436000, C257S446000
Reexamination Certificate
active
06844607
ABSTRACT:
A photodiode array device having an absorption layer and a cladding layer formed on one surface of a single substrate, anodes formed on the cladding layer, a cathode formed on the other surface of the substrate, and a plurality of light-receiving regions; a photodiode module including the photodiode array device; and a structure for connecting the photodiode module and an optical connector. The photodiode array device has trenches formed on the one surface of the substrate and having such a depth as to divide the absorption layer into subdivisions, for cutting off propagation of light between adjacent light-receiving regions.
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Higuchi Takeshi
Iwase Masayuki
Shirai Takehiro
Tsukiji Naoki
Knobbe Martens Olson & Bear LLP
The Furukawa Electric Co. Ltd.
Wojciechowicz Edward
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