Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-03-25
2010-02-16
Lindsay, Jr., Walter L (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C250S370110
Reexamination Certificate
active
07663169
ABSTRACT:
A photodiode array1is provided with an n-type silicon substrate3. A plurality of photodiodes4are formed in array on the opposite surface side to an incident surface of light L to be detected, in the n-type silicon substrate3. A resin film6for transmitting the light L to be detected is provided so as to cover at least regions corresponding to regions where the photodiodes4are formed, on the incident surface side of the light L to be detected, in the n-type silicon substrate3.
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Drinker Biddle & Reath LLP
Hamamatsu Photonics K.K.
Lindsay, Jr. Walter L
Patel Reema
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