Photodiode array and production method thereof, and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C250S370110

Reexamination Certificate

active

07663169

ABSTRACT:
A photodiode array1is provided with an n-type silicon substrate3. A plurality of photodiodes4are formed in array on the opposite surface side to an incident surface of light L to be detected, in the n-type silicon substrate3. A resin film6for transmitting the light L to be detected is provided so as to cover at least regions corresponding to regions where the photodiodes4are formed, on the incident surface side of the light L to be detected, in the n-type silicon substrate3.

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