Photodiode and method of fabricating the same

Details Photodiode and method of fabricating the same Photodiode and method of fabricating the same

2006-11-14

2006-11-14

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S057000, C438S311000, C257S290000, C257S461000

Reexamination Certificate

active

07135349

ABSTRACT:
Photodiodes and methods of fabricating photodiodes are provided. For example, a method of fabricating a photodiode includes forming a buried layer of a first conductive type on a semiconductor substrate and forming a first intrinsic capping epitaxial layer on the buried layer. A first intrinsic epitaxial layer of the first conductive type is formed on the first intrinsic capping epitaxial layer. A first junction region of the first conductive type is formed in the first intrinsic epitaxial layer. A second intrinsic epitaxial layer of the second conductive type is formed on the first junction region and the first intrinsic epitaxial layer. A second intrinsic capping epitaxial layer is formed on the second intrinsic epitaxial layer. A second junction region of the first conductive type is formed such that the second junction region passes through the second intrinsic capping epitaxial layer and the second intrinsic epitaxial layer. The second junction region contacts the first junction region. A first electrode is formed on a surface of the second junction region and a second electrode is formed on a surface of the second intrinsic capping epitaxial layer.

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