Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-05
2010-06-01
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE33076
Reexamination Certificate
active
07728366
ABSTRACT:
A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.
REFERENCES:
patent: 4864119 (1989-09-01), Ragle et al.
patent: 5451769 (1995-09-01), McAdoo et al.
patent: 6236033 (2001-05-01), Ebbesen et al.
patent: 6334716 (2002-01-01), Ojima et al.
patent: 2003/0011722 (2003-01-01), Kasama et al.
patent: 2003/0072245 (2003-04-01), Ueyanagi
patent: 2003/0160250 (2003-08-01), Cova et al.
patent: 2003/0173501 (2003-09-01), Thio et al.
patent: 2003/0185135 (2003-10-01), Fujikata et al.
patent: 2004/0151442 (2004-08-01), Scruggs et al.
patent: 59-108374 (1984-06-01), None
patent: 08-204225 (1996-08-01), None
patent: 08-204226 (1996-08-01), None
patent: 10-509806 (1998-09-01), None
patent: 2000-171763 (2000-06-01), None
patent: 2000-222765 (2000-08-01), None
patent: 2001-291265 (2001-10-01), None
patent: 2002-076410 (2002-03-01), None
patent: 2003-287656 (2003-10-01), None
patent: 2004-061880 (2004-02-01), None
patent: 2004-70288 (2004-03-01), None
Fujikata, et al., “Surface Plasmon Enhancement Effect and Its Application to Near-Field Optical Recording”, Trans. Magn. Soc. Jpn., vol. 4, No. 4-2, 2004.
“Transactions of the Magnetics Society of Japan”, Selected Papers from Magneto-Optical Recording International Symposium, vol. 4, No. 4-2, No. 15 (2004) http://www.nil.ac.jp/msj2, Nov. 2004.
Baba Toshio
Fujikata Junichi
Ishi Tsutomu
Makita Kikuo
Oohashi Keishi
Ahmed Selim
Hayes & Soloway P.C.
NEC Corporation
Purvis Sue
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