Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-04
2011-01-04
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S066000
Reexamination Certificate
active
07863660
ABSTRACT:
Disclosed is a photodiode having a silicon film (5) formed of a continuous grain silicon, where the silicon film (5) has a p-type semiconductor region (2), an intrinsic semiconductor region (3) and an n-type semiconductor region (4), which are arranged in this order along the surface of the silicon film (5). The intrinsic semiconductor region (3) is formed to be in contact with the p-type semiconductor region (2) and the n-type semiconductor region (4). The distance L from the boundary between the intrinsic semiconductor region (3) and the p-type semiconductor region (2) to the boundary between the intrinsic semiconductor region (3) and the n-type semiconductor region (4) is set to not less than 2.5 μm and not more than 10 μm. The distance L is preferably set to not less than 3 μm and not more than 7 μm.
REFERENCES:
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5618741 (1997-04-01), Young et al.
patent: 7217955 (2007-05-01), Hamaoka et al.
patent: 2001/0041397 (2001-11-01), Fukushima
patent: 2002/0149017 (2002-10-01), Gotoh et al.
patent: 2003/0001800 (2003-01-01), Nakajima et al.
patent: 2005/0077577 (2005-04-01), Manna et al.
patent: 4-174819 (1992-06-01), None
patent: 5-241512 (1993-09-01), None
patent: 2003-249447 (2003-09-01), None
Tada et al., “A Touch Panel Function Integrated LCD Using LTPS Technology”,IDW, '04, pp. 349-350.
Afazalian et al., Physical Modelling and Design of thin film SOI lateral PIN Photodiodes for Blue DVD-applications,IEEE, Oct. 2004, pp. 21-23.
Radovanovic et al., “High-speed lateral polysilicon photodiode in standard CMOS technology”,IEEE, 2003, pp. 521-524.
Yang et al., A High-Speed, High-Sensitivity Silicon Lateral Trench Photodetector,IEEE, vol. 23, No. 7, 2002, pp. 395-397.
Dang Phuc T
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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