Photodetector sealing resin is a boride or an oxide of micro...

Details Photodetector sealing resin is a boride or an oxide of micro... Photodetector sealing resin is a boride or an oxide of micro...

2006-01-17

2009-08-25

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

With specified encapsulant

C257S788000, C257S789000, C257S795000, C257SE25032

Reexamination Certificate

active

07579698

ABSTRACT:
A semiconductor photodetector which can achieve spectral sensitivity characteristics close to relative luminous characteristics at low cost while using a light receiving element of a semiconductor made from such as silicon, has a semiconductor light receiving element having high spectral sensitivity in a wavelength range between approximately 400 nm to 1100 nm and an optical transmitting resin for sealing at least a light receiving surface of the semiconductor light receiving element. The optical transmitting resin is formed by dispersing metal boride micro particles whose particle diameter is not more than approximately 100 nm in a transparent resin and blocks light in wavelengths approximately 700 nm or above.

REFERENCES:
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patent: 6013935 (2000-01-01), Shie
patent: 6221945 (2001-04-01), Kuno et al.
patent: 6277187 (2001-08-01), Kuno et al.
patent: 6476374 (2002-11-01), Kozlowski et al.
patent: 6633030 (2003-10-01), Joshi
patent: 6770956 (2004-08-01), Fujimoto et al.
patent: 9-15044 (1997-01-01), None
Machine translation of JP-9-15044, 5 pages.

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