Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-12-23
2008-05-06
Warren, Matthew E. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S291000, C257S293000, C257S443000, C257S461000, C257SE27133
Reexamination Certificate
active
07368773
ABSTRACT:
A photodetector device is provided which comprises a photodiode for generating an electrical signal corresponding to an amount of incident light, and a logarithmic conversion transistor for subjecting a voltage value of the electrical signal to logarithmic conversion. The logarithmic conversion transistor comprises a first electrode which is one of a source electrode and a drain electrode, a second electrode which is the other of the source electrode and the drain electrode, and a gate electrode. The first electrode is connected to the photodiode. A first voltage is applied to the second electrode so that the logarithmic conversion transistor operates in a subthreshold region. The photodetector device further comprising a section for causing a voltage of the gate electrode to be in a floating state when the logarithmic conversion transistor subjects the voltage value of the electrical signal to logarithmic conversion.
REFERENCES:
patent: 5363000 (1994-11-01), Miyatake et al.
patent: 7009649 (2006-03-01), Watanabe
patent: 2001-245214 (2001-09-01), None
patent: 2003-158683 (2003-05-01), None
Harness Dickey & Pierce PLC
Sharp Kabushiki Kaisha
Warren Matthew E.
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