Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Reexamination Certificate
2011-07-05
2011-07-05
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
C257S186000, C257S458000, C257SE33076, C257SE31115
Reexamination Certificate
active
07972934
ABSTRACT:
A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodetector includes at least one conductive via formed in the first main surface and an anode/cathode region proximate the first main surface and the at least one conductive via. The via extends to the second main surface. The conductive via is isolated from the semiconductor substrate by a first dielectric material. The anode/cathode region is a second conductivity opposite to the first conductivity. The photodetector includes a doped isolation region of a third doping concentration formed in the first main surface and extending through the first layer of the semiconductor substrate to at least the second layer of the semiconductor substrate.
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Brogan Conor
Griffin Hugh J.
MacNamara Cormac
Wilson Robin
Icemos Technology Ltd.
Panitch Schwarze Belisario & Nadel LLP
Vu David
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