Photodetector array

Details Photodetector array Photodetector array

2007-10-09

2007-10-09

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S444000, C257SE27133

Reexamination Certificate

active

10849094

ABSTRACT:
A photodetector array made in monolithic form, in which transistors are formed in a semiconductor substrate coated with several metallization levels and photodiodes are formed above a last metallization level, each photodiode having an upper region of a first conductivity type common to all photodiodes and an individual lower region forming a junction with the upper region in contact with a metallization of the last level, wherein each lower region is separated from the neighboring lower regions by an insulating material and is connected to the metallization through a via formed in at least one insulating layer.

REFERENCES:
patent: 5557121 (1996-09-01), Kozuka et al.
patent: 5936261 (1999-08-01), Ma et al.
patent: 6051867 (2000-04-01), Theil et al.
patent: 6215164 (2001-04-01), Cao et al.
patent: 6325977 (2001-12-01), Theil
patent: 6501065 (2002-12-01), Uppal et al.
patent: 6720594 (2004-04-01), Rahn et al.
patent: 6841411 (2005-01-01), Varghese
patent: WO98 47181 (1998-10-01), None
French Search Report from French Patent Application 03/06343, filed May 26, 2003.

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