Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-25
2011-01-25
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S293000, C257S233000, C257SE31058
Reexamination Certificate
active
07875916
ABSTRACT:
An image sensor with an image area having a plurality of photodetectors of a first conductivity type includes a substrate of the second conductivity type; a first layer of the first conductivity type spanning the image area; a second layer of the second conductivity type; wherein the first layer is between the substrate and the second layer, and the plurality of photodetectors is disposed in the second layer and abut the first layer.
REFERENCES:
patent: 4142195 (1979-02-01), Carlson et al.
patent: 4527182 (1985-07-01), Ishihara et al.
patent: 4672455 (1987-06-01), Miyatake
patent: 4851890 (1989-07-01), Miyatake
patent: 5238864 (1993-08-01), Maegawa et al.
patent: 5608204 (1997-03-01), Höfflinger et al.
patent: 5880495 (1999-03-01), Chen
patent: 5898196 (1999-04-01), Hook et al.
patent: 6023081 (2000-02-01), Drowley et al.
patent: 6023293 (2000-02-01), Watanabe et al.
patent: 6084259 (2000-07-01), Kwon et al.
patent: 6107655 (2000-08-01), Guidash
patent: 6150682 (2000-11-01), Sawada et al.
patent: 6225670 (2001-05-01), Dierickx
patent: 6297070 (2001-10-01), Lee et al.
patent: 6423993 (2002-07-01), Suzuki et al.
patent: 6504196 (2003-01-01), Rhodes
patent: 6512547 (2003-01-01), Miida
patent: 6593607 (2003-07-01), Hseih
patent: 7064362 (2006-06-01), Roy
patent: 7253461 (2007-08-01), Yang et al.
patent: 2001/0006237 (2001-07-01), Abe
patent: 2002/0125513 (2002-09-01), Inoue
patent: 2003/0096443 (2003-05-01), Hwang
patent: 2003/0138990 (2003-07-01), Rhodes
patent: 2004/0094784 (2004-05-01), Rhodes et al.
patent: 2004/0140491 (2004-07-01), Rhodes et al.
patent: 2004/0206991 (2004-10-01), Yato
patent: 2004/0222449 (2004-11-01), Koyama
patent: 2005/0087672 (2005-04-01), Kuwazawa et al.
patent: 2006/0145202 (2006-07-01), Sawase et al.
patent: 2006/0226438 (2006-10-01), Katsuno et al.
patent: 2006/0244020 (2006-11-01), Lee
patent: 2007/0069260 (2007-03-01), Stevens
patent: 2007/0069315 (2007-03-01), Stevens et al.
patent: 2007/0108371 (2007-05-01), Stevens et al.
patent: 19933162 (2004-11-01), None
patent: 0 809 299 (1997-11-01), None
patent: 0917206 (1999-05-01), None
patent: 1 128 437 (2001-08-01), None
patent: 1128437 (2008-01-01), None
patent: 0809299 (2008-04-01), None
patent: 2332049 (1999-06-01), None
patent: 00/00994 (2000-01-01), None
S. Inoue et al., “A 3.25 M-pixel APS-C size CMOS Image Sensor,” in Eisoseiho Media Gakkai Gijutsu Hokoku (Technology Report, Image Information Media Association) Eiseigakugiko, vol. 25, No. 28, pp. 37-41, Mar. 2001. ISSN 1342-6893. (Translation provided).
Furumiya et al., “High Sensitivity and No-Cross-Talk Pixel Technology for Embedded CMOS Image Sensor”, International Electron Devices Meeting 2000. IEDM Technical Digest, San Francisco, CA, Dec. 10-13, 2000. pp. 701-704 ISBN: 0-7803-6439-2.
Endo et al., “4-micro pixel CMOS image sensor with low image lag and high-temperature operability,”Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications, Proceedings of SPIE-IS&T Elec. Imaging, SPIE vol. 5017 (2003). pp. 196-204.
E.G. Stevens and J.P. Lavine inIEEE Trans. on Electron Devices, vol. 41, No. 10, p. 1753-1760, Oct. 1994.
G. Meynants, et al., “CMOS Active Pixel Image Sensor with CCD Performance,” SPIE EUROPTO AFPAEC Conference, May 18-19, 1998.
H. Takahashi, et al., “A 3.9um Pixel Pitch VGA Format 10-b Digital Output CMOS Image Sensor With 1.5 Transistor/Pixel,” IEEE Journal of Solid-State Circuits, vol. 39, No. 12, Dec. 2004, pp. 2417-2425.
George Lungu et al., “Design, Fabrication and Characterization of a Family of Active Pixel CID Images,” Proceedings SPIE 1999, vol. No. 3649, pp. 67-73.
Endo et al., “4-micro pixel CMOS image sensor with low image lag and high-temperature operability,”Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications,Proceedings of SPIE-IS&T Elec. Imaging, SPIE vol. 5017 (2003). pp. 196-204.
E.G. Stevens and J.P. Lavine inIEEE Trans. on Electron Devices,vol. 41, No. 10, pp. 1753-1760, Oct. 1994.
G. Meynants, et al., “CMOS Active Pixel Image Sensor with CCD Performance,” SPIE EUROPTO AFPAEC Conference, May 18-19, 1998.
H. Takahashi, et al., “A 3.9um Pixel Pitch VGA Format 10-b Digital Output CMOS Image Sensor With 1.5 Transistor/Pixel,” IEEE Journal of Solid-State Circuits, vol. 39, No. 12, Dec. 2004, pp. 2417-2425.
Furumiya et al., “High Sensitivity and No-Cross-Talk Pixel Technology for Embedded CMOS Image Sensor”, International Electron Devices Meeting 2000. IEDM Technical Digest, San Francisco, CA, Dec. 10-13, 2000. pp. 701-704 ISBN: 0-7803-6439-2.
George Lungu et al., “Design, Fabrication and Characterization of a Family of Active Pixel CID Images,” Proceedings SPIE 1999, vol. No. 3649, pp. 67-73.
S. Inoue et al., “A 3.25 M-pixel APS-C size CMOS Image Sensor”, ITE Technical Report, vol. 25, No. 28, pp. 37-41, Mar. 2001.
Nichols David N.
Stevens Eric G.
Eastman Kodak Company
Simon Nancy R.
Tran Tan N
Watkins Peyton C.
LandOfFree
Photodetector and n-layer structure for improved collection... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photodetector and n-layer structure for improved collection..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photodetector and n-layer structure for improved collection... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2713743