Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2005-05-03
2005-05-03
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S289000, C438S194000
Reexamination Certificate
active
06887735
ABSTRACT:
An anti-reflective coating having a composite layer of silicon nitride and silicon dioxide may be formed over the entire photosensitive region of the photodetector to minimize the amount of reflection. The composite layer comprises a silicon nitride layer and a dielectric layer contiguous to the silicon nitride layer. The anti-reflective coating may be formed in a CMOS process for fabricating the PN junction in the photodiode and CMOS devices for amplifying the photodetector signal, where the polysilicon gate layer is used as a etch stop. The P+ or N+ material in the PN junction of the photodiode has a distributed design where two portions of the region are separated by a distance in the range of Xd to 2Xd, where Xd is the one-sided junction depletion width, to enhance the electric field and to reduce the distance traveled by the carriers for enhancing bandwidth. A heavily doped region of the opposite type may be added between the two portions to further enhance the electric field. A mask is used to shield a portion of the substrate in which the photodetector region has been or is to be formed when other portions of the substrate region are implanted with a dopant to adjust at least one of the threshold voltages of the other portions. The mask prevents the photodetector region from being affected by such implant.
REFERENCES:
patent: 3996461 (1976-12-01), Sulzbach et al.
patent: 4131488 (1978-12-01), Lesk et al.
patent: 4606115 (1986-08-01), Kervin et al.
patent: 4631417 (1986-12-01), Brilman
patent: 4668971 (1987-05-01), Hynecek
patent: 4717631 (1988-01-01), Kaganowicz et al.
patent: 4903103 (1990-02-01), Yamashita et al.
patent: 5077587 (1991-12-01), Albergo et al.
patent: 5162887 (1992-11-01), Dierschkc
patent: 5177581 (1993-01-01), Kubo et al.
patent: 5262633 (1993-11-01), Kasai et al.
patent: 5466962 (1995-11-01), Yamamoto et al.
patent: 5600130 (1997-02-01), VanZeghbroeck
patent: 5614744 (1997-03-01), Merrill
patent: 5625210 (1997-04-01), Lee et al.
patent: 5672906 (1997-09-01), Saito et al.
patent: 5726440 (1998-03-01), Kalkhoran et al.
patent: 5767555 (1998-06-01), Sakano
patent: 5831321 (1998-11-01), Nagayama
patent: 5854100 (1998-12-01), Chi
patent: 5945722 (1999-08-01), Tsuei et al.
patent: 5952686 (1999-09-01), Chou et al.
patent: 6027955 (2000-02-01), Lee et al.
patent: 6040593 (2000-03-01), Park
patent: 6064053 (2000-05-01), Chi
patent: 6084259 (2000-07-01), Kwon et al.
patent: 6130423 (2000-10-01), Brehmer et al.
patent: 6137127 (2000-10-01), Merrill
patent: 6177293 (2001-01-01), Netzer et al.
patent: 6177322 (2001-01-01), Derhacobian et al.
patent: 6259124 (2001-07-01), Guidash
patent: 6380572 (2002-04-01), Pain et al.
patent: 6392282 (2002-05-01), Sahara et al.
patent: 20010010353 (2001-08-01), Merrill et al.
patent: 20010013631 (2001-08-01), Rhodes
patent: 20010017367 (2001-08-01), Rotstein
patent: 20010019851 (2001-09-01), Connolly et al.
patent: 20020011554 (2002-01-01), Brehmer et al.
patent: 20020171077 (2002-11-01), Chu et al.
patent: 02278414 (1992-05-01), None
patent: 02329614 (1992-07-01), None
patent: 06287679 (1996-06-01), None
Dorf, Richard C., Editor-in Chief, “SI-OEIC (OPIC) for Optical Pickup,”The Electrical Engineering Handbook, CRC Press, 1996, pp. 458, 752-753.
Fukunaga, Naoki et al., “I-OEIC (OPIC) for Optical Pickup”IEEE Transactions on Consumer Electronics. vol. 43, No. 2 May 1997. pp. 157-164.
Takimoto, Takahiro et al., High Speed SI-OEIC (OPIC) for Optical Pickup,IEEE Transactions on Consumer Electronics, vol. 44, No. 1 Feb. 1998, pp. 137-142.
“Applications of Silicon Photodiodes,” Optoelectronic Components catalog produced by UDT Sensors, Inc. Hawthorne, CA 90250, pp. 3-9.
“European Search Report”, European Patent Application No. 99307140.6, European Patent Office, Jul. 07, 2003, 5 pages.
Capella Microsystems, Inc.
Mulpuri Savitri
Parsons, Hsue & de Runtz
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