Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-05-10

2005-05-10

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S655000

Reexamination Certificate

active

06891238

ABSTRACT:
A semiconductor device including a silicon substrate, a gate insulator film formed on the silicon substrate and including silicon, deuterium, and at least one of oxygen and nitrogen, and a gate electrode formed on the gate insulator film wherein a deuterium concentration in a vicinity of an interface of the gate insulator film with the gate electrode is at least 1×107cm−3, and a deuterium concentration in a vicinity of an interface of the gate insulator film with the silicon substrate is higher than the deuterium concentration in the vicinity of the interface of the gate insulation film with the gate electrode.

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Hyojune Kim anf Hyunsang Hwang, High-Quality Ultrathin Gate Oxide Prepared By Oxidation in D2O, Applied Physics Letters, vol. 74, No. 5, Feb. 1, 1999, pp. 709-710.

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