Photoconductor for GaAs laser addressed devices

Details Photoconductor for GaAs laser addressed devices Photoconductor for GaAs laser addressed devices

1978-01-13

1979-04-03

Padgett, Benjamin R.

Compositions

Electrically conductive or emissive compositions

Light sensitive

252518, H01C 3100

Patent

active

041476670

ABSTRACT:
An improved photoconductor for GaAs laser addressed devices sensitive to illumination at about 1.5 eV is an amorphous material containing silicon, hydrogen and a material taken from the group consisting of Ge, Sn and Pb. A preferred embodiment of this invention is amorphous Si.sub.x Ge.sub.1-x H.sub.y where x equals 0.78 to 0.93 and y equals 14-20 atomic percent.

REFERENCES:
patent: 3279954 (1966-10-01), Cody et al.
patent: 3966470 (1976-06-01), Feltz et al.
patent: 3979271 (1976-09-01), Noreika et al.
Journal of Non-Crystalline Solids, 13 (1973/74) 55-68, "Photoconductivity and Absorption in Amorphous Si."
Journal of Non-Crystalline Solids, 4 (1970) 272-278, "The Fundamental Absorption of Amorphous Ge, Si and GeSi Alloys."
Journal of Non-Crystalline Solids, 3 (1970), 225-270, "Properties of Glow-Discharge Deposited Amorphous Germanium and Silicon."
"Optical Properties of Amorphous Si-Ge Alloys Prepared by the Glow Discharge Process", A. Onton et al., San Diego Meeting of the American Physical Society, Mar. 21-24, 1977.

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