Photo sensor integrated circuit

Details Photo sensor integrated circuit Photo sensor integrated circuit

1997-12-04

2000-05-30

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257292, 257434, 257435, 428 57, 428 73, H01L 31062, H01L 31113, H01L 310203, H01L 310232

Patent

active

060693789

ABSTRACT:
A photo diode and a signal processing circuit are formed on a silicon substrate. The signal processing circuit comprises a PNP transistor and an NPN transistor. A region of the signal processing circuit on the silicon substrate is covered by an aluminum thin film functioning as a shielding film. A covered distance L(.mu.m) is defined as an overhang of the aluminum thin film from the edge of the PNP transistor, and is determined based on a ratio of a minimum current of the PNP transistor, which induces malfunction in the signal processing circuit under the solar radiation, to a current generated in the circuit element when subjected to the solar radiation without the aluminum thin film.

REFERENCES:
patent: 5040039 (1991-08-01), Hattori et al.
patent: 5061978 (1991-10-01), Mizutani et al.
patent: 5101253 (1992-03-01), Mizutani et al.
patent: 5268309 (1993-12-01), Mizutani et al.
patent: 5602384 (1997-02-01), Nunogaki et al.
patent: 5614741 (1997-03-01), Harada et al.
patent: 5877830 (1999-03-01), Shimada et al.

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