1986-06-30
1988-04-26
James, Andrew J.
357 30, 357 16, 357 52, H01L 2990
Patent
active
047408197
ABSTRACT:
Disclosed is a photo-detective semiconductor device having, on a predetermined semiconductor substrate, at least a first semiconductor layer which exhibits a first conductivity type, a second semiconductor layer which is disposed on said first semiconductor layer, which has a forbidden band gap greater than that of said first semiconductor layer and which exhibits the first conductivity type, and a p-n junction which is formed by a region disposed in said second semiconductor layer and exhibiting a second conductivity type; characterized by comprising a third semiconductor layer which is disposed on said second semiconductor layer, which exhibits the first conductivity type and which has a surface protective function. The third semiconductor layer is usually made of a group III-V compound semiconductor of a quaternary system. By way of example, in a case where the first semiconductor layer is formed of InGaAsP and where the second semiconductor layer is formed of InP, the third semiconductor layer is made of InGaAsP, InGaAs or the like. A photo-detective semiconductor device of low dark current can be provided.
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Kawata Masahiko
Koga Yasushi
Kurata Kazuhiro
Matsuda Hiroshi
Morioka Makoto
Crane Sara W.
Hitachi , Ltd.
James Andrew J.
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