Photo-mask blank for use in lithography including a modified chr

Details Photo-mask blank for use in lithography including a modified chr Photo-mask blank for use in lithography including a modified chr

1983-12-29

1985-07-23

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

427164, 427165, 428203, 428432, 428698, 156655, 156656, 430321, G03F 900

Patent

active

045308918

ABSTRACT:
In a photo-mask blank, a transparent substrate is covered with a shading layer including chromium and chromium carbide. On the shading layer is an antireflection layer which includes chromium and chromium nitride. The shading and the antireflection layers are deposited in the same hollow space by sputtering. The etch rate of the shading layer is adjustable to that of the antireflection layer to make both etch rates equal and, thereby, to reduce undercuts appearing at the shading layer.

REFERENCES:
patent: 3846084 (1974-11-01), Pelton
patent: 4341841 (1982-07-01), Ohno et al.
patent: 4351894 (1982-09-01), Yonezawa et al.
patent: 4363846 (1982-12-01), Kaneki

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