Photo mask and method for fabricating image sensor using the...

Details Photo mask and method for fabricating image sensor using the... Photo mask and method for fabricating image sensor using the...

2011-08-23

2011-08-23

McPherson, John A. (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S319000, C430S321000, C430S396000, C257SE21001

Reexamination Certificate

active

08003307

ABSTRACT:
A method for fabricating an image sensor includes forming an insulation layer over a substrate in a logic circuit region and a pixel region, forming a photoresist over the insulation layer, patterning the photoresist to form a photoresist pattern where the insulation layer in the pixel region is exposed and the insulation layer in the logic circuit region is not exposed, wherein a thickness of the photoresist pattern is gradually decreased in an interfacial region between the pixel region and the logic circuit region in a direction of the logic circuit region to the pixel region, and performing an etch back process over the insulation layer and the photoresist pattern in conditions that an etch rate of the photoresist pattern are substantially the same as that of the insulation layer.

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patent: 2006/0183265 (2006-08-01), Oh et al.
patent: 2007/0262406 (2007-11-01), Yoshida
patent: 1819220 (2006-08-01), None
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patent: 10-2001-0086625 (2001-09-01), None
patent: 10-0649861 (2006-11-01), None

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