Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-02-01
2011-02-01
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S066000, C257SE31115, C257SE31121
Reexamination Certificate
active
07880207
ABSTRACT:
A photo detector device comprising a first layer comprising a first material, and a second layer arranged adjacent to the first layer, the second layer comprising strained silicon, wherein the second layer further comprises a light absorption region located substantially within the strained silicon, wherein the first or the second layer is arranged on a substrate.
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patent: 7164182 (2007-01-01), Mouli
patent: 7358585 (2008-04-01), Patel et al.
patent: 7608903 (2009-10-01), Mouli
patent: 2005/0006565 (2005-01-01), Mouli
Fertig Matthias
Moll Nikolaj
Morf Thomas E.
Pflueger Thomas
Weiss Jonas R.
Canale Anthony J.
Hoang Quoc D
International Business Machines - Corporation
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