Photo detector and optically interconnected LSI

Details Photo detector and optically interconnected LSI Photo detector and optically interconnected LSI

2010-06-09

2011-10-25

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S465000, C257S466000, C257SE25032

Reexamination Certificate

active

08044483

ABSTRACT:
A photo detector having an electrically conductive thin film and a light-receiving unit. A coupling periodic structure is provided on a surface of the film and converts incidence light to surface plasmon. The coupling periodic structure has an opening that penetrates the obverse and reverse surfaces of the thin film. The light-receiving unit is provided at one end of the opening in the surface that is opposite to the surface on which the coupling periodic structure is provided. The opening is shaped like a slit and is broader than half (½) the wavelength of the surface plasmon in a direction that intersects at right angles with a polarization direction of the incidence light and is narrower than half (½) the wavelength of the surface plasmon in a direction parallel to the polarization direction.

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Office Action issued Nov. 24, 2010, in Japanese Patent Application No. 2006-069535 with Englisn translation.

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