Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-18
2010-11-09
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S458000, C257SE31061
Reexamination Certificate
active
07829920
ABSTRACT:
A photo detector has a sensing TFT (thin film transistor) and a photodiode. The sensing TFT has a gate and a base. The photodiode has an intrinsic semiconductor region electrically connected to the gate and the base of the sensing TFT. The sensing TFT and the photodiode both have a structure comprising low temperature poly-silicon. A display panel contains the photo detector is also disclosed.
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patent: 62-202556 (1987-09-01), None
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English language translation of abstract of JP 62-202556.
English language translation of abstract of TW I261140.
English language translation of abstract of TW M251147.
Chao Chih-Wei
Chen Chih-Yang
Chiang Wen-Jen
Cho An-Thung
Gan Feng-Yuan
Au Optronics Corporation
Ho Tu-Tu V
Thomas Kayden Horstemeyer & Risley LLP
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