Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-12-19
2008-09-02
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S053000, C257S184000, C257SE31046, C438S057000, C438S094000
Reexamination Certificate
active
07420207
ABSTRACT:
A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping layer, and a second silicon epitaxial layer of second conductivity type is disposed on the first silicon epitaxial layer. An isolation doping layer doped of first conductivity type is disposed at a predetermined region of the second silicon epitaxial layer to define a body region of second conductivity type. A silicon germanium epitaxial layer of second conductivity type is disposed on the body region.
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Chang Phil-Jae
Kim Tae-Jin
Maeng Kye-Won
Park Young-Jun
Yoon Kwang-Joon
Mandala, Jr. Victor A
Pert Evan
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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