Phosphorus activated NMOS using SiC process

Details Phosphorus activated NMOS using SiC process Phosphorus activated NMOS using SiC process

2007-02-20

2007-02-20

Chambliss, Alonzo (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S197000, C257S192000, C257SE21040, C257SE21051

Reexamination Certificate

active

10943278

ABSTRACT:
A method (10) of forming a transistor (100) includes treating (12) at least some of a semiconductor substrate (102) with carbon and then forming (18) a gate structure (114) over the semiconductor substrate. A channel region (122) is thereby being defined within the semiconductor substrate (102) below the gate structure (114). Source and drain regions (140, 142) are then formed (26) within the semiconductor substrate (102) on opposing sides of the channel (122) with a phosphorus dopant.

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