Phosphorous doping a semiconductor particle

Details Phosphorous doping a semiconductor particle Phosphorous doping a semiconductor particle

1995-12-11

1999-07-20

Chaudhari, Chandra

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438567, H01L 2122

Patent

active

059267275

ABSTRACT:
A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.

REFERENCES:
patent: 2974073 (1961-03-01), Armstrong
patent: 3914138 (1975-10-01), Rai-Choudhury
patent: 5028546 (1991-07-01), Hotchkiss
patent: 5223452 (1993-06-01), Knepprath
patent: 5432127 (1995-07-01), Lamson et al.
patent: 5556791 (1996-09-01), Stevens et al.
Appl. 08/570,070 Filed Dec. 11, 1995 by Stevens et al.

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