Phase shifting mask for manufacturing semiconductor device...

Details Phase shifting mask for manufacturing semiconductor device... Phase shifting mask for manufacturing semiconductor device...

2005-05-17

2005-05-17

Barreca, Nicole (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S311000, C430S322000, C430S323000, C430S324000

Reexamination Certificate

active

06893779

ABSTRACT:
A phase shifting mask (PSM) for manufacturing a semiconductor device and a method of fabricating the same includes a transparent substrate, a main pattern formed on the transparent substrate and comprising a first phase shifting layer having a first optical transmittance greater than 0, and at least one assistant pattern formed on the transparent substrate proximal to the main pattern for phase-shifting by the same degree as the main pattern and having a second optical transmittance, which is less than the first optical transmittance.

REFERENCES:
patent: 4720442 (1988-01-01), Shinkai et al.
patent: 5242770 (1993-09-01), Chen et al.
patent: 5256505 (1993-10-01), Chen et al.
patent: 5447810 (1995-09-01), Chen et al.
patent: 5641592 (1997-06-01), Kim
patent: 5663893 (1997-09-01), Wampler et al.
patent: 5783337 (1998-07-01), Tzu et al.
patent: 5789117 (1998-08-01), Chen
patent: 5849438 (1998-12-01), Bae
patent: 5900337 (1999-05-01), Lee
patent: 6015641 (2000-01-01), Chou
patent: 6458496 (2002-10-01), Motonaga et al.
patent: 2001-222097 (2001-08-01), None
patent: 97-48926 (1997-07-01), None

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