Phase-shifting mask and semiconductor device

Semiconductor device manufacturing: process – Masking

Reexamination Certificate

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C438S945000, C257SE21235

Reexamination Certificate

active

11385156

ABSTRACT:
Disclosed is a phase-shifting mask having a pattern comprising a plurality of substantially transparent regions and a plurality of substantially opaque regions wherein the mask pattern phase-shifts at least a portion of incident radiation and wherein the phases are substantially equally spaced, thereby increasing resolution of a given lithographic system. Further disclosed is a semiconductor device fabricated utilizing the phase-shifting mask.

REFERENCES:
patent: 5789117 (1998-08-01), Chen
patent: 2004/0214097 (2004-10-01), Suttile et al.
patent: 0 090 924 A 2 (1983-10-01), None
patent: 0 492 630 A 2 (1992-07-01), None
patent: 0 730 200 A 2 (1996-09-01), None
patent: 2 291 218 (1996-01-01), None
Liebmann et al, “Alternating Phase Shifted Mask for Logic Gate Levels, Design and Mask Manufacturing”, SPIE, vol. 3679 p. 27 (1999).
Levenson et al, “Improving Resolution in Photolithography with a Phase-Shifting Mask”, IEEE Transactions on Electron Devices, ED-29, No. 12, p. 1828 (1982).

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