Phase shift photomask and phase shift photomask dry etching meth

Details Phase shift photomask and phase shift photomask dry etching meth Phase shift photomask and phase shift photomask dry etching meth

1996-02-28

1998-03-03

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430312, G03F 900

Patent

active

057232342

ABSTRACT:
A phase shift photomask capable of being produced by dry etching with adequate in-plane uniformity of pattern dimension even if there is a large difference in exposed area ratio between different areas on the mask. In a phase shift photomask having an area provided with a phase shift layer which practically shifts the phase relative to another area, a dummy etching pattern (13) for dry etch rate correction is provided in an area other than a pattern exposure area (9 and 10), or a dummy etching pattern for dry etch rate correction having a size less than the limit of resolution attained by transfer is provided in the pattern exposure area, thereby reducing the etch rate nonuniformity due to the pattern density variation in the process of dry etching the phase shift photomask, and thus providing a phase shift photomask of high accuracy.

REFERENCES:
patent: 5005075 (1991-04-01), Kobayashi et al.
patent: 5597668 (1997-01-01), Nowak et al.

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