Phase shift masks including first and second radiation blocking

Details Phase shift masks including first and second radiation blocking Phase shift masks including first and second radiation blocking

1997-07-24

1999-04-20

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

058957359

ABSTRACT:
Phase shift masks include axially spaced apart first and second radiation blocking layer patterns and a phase shifting layer pattern between the first and second radiation blocking layer patterns, on a phase shift mask substrate. The first and second axially spaced part radiation blocking layers can define narrow areas of the phase shifting layers so that patterns having fine linewidths and improved resolution can be formed on integrated circuits. Phase shifting masks can be fabricated by forming a first radiation blocking layer pattern on a phase shift mask, blanket forming a phase shifting layer and a second radiation blocking layer, patterning the second radiation blocking layer and patterning the phase shifting layer.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5424153 (1995-06-01), Asai
patent: 5478678 (1995-12-01), Yang et al.
patent: 5582939 (1996-12-01), Pierrat
patent: 5591549 (1997-01-01), Yang

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