Phase shift mask blank, phase shift mask, and pattern...

Details Phase shift mask blank, phase shift mask, and pattern... Phase shift mask blank, phase shift mask, and pattern...

2008-04-01

2008-04-01

Rosasco, S. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

10968886

ABSTRACT:
In a phase shift mask blank comprising a phase shift multilayer film on a substrate, the phase shift multilayer film consists of at least one layer of light absorption function film and at least one layer of phase shift function film, and the light absorption function film has an extinction coefficient k which increases as the wavelength changes from 157 nm to 260 nm, and has a thickness of up to 15 nm. The phase shift mask blank has minimized wavelength dependency of transmittance and can be processed with a single dry etching gas.

REFERENCES:
patent: 7011910 (2006-03-01), Shiota et al.
patent: 2003/0008219 (2003-01-01), Kaneko et al.
patent: 2003/0077520 (2003-04-01), Smith
patent: 2003/0180630 (2003-09-01), Shiota et al.
patent: 0872767 (1998-10-01), None
patent: 7-140635 (1995-06-01), None
Fukuhara et al., 19th Annual Symposium on Photomask Technology, vol. 3873, pp. 979-986, (1999).

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