Phase-shift mask and method for forming a pattern

Details Phase-shift mask and method for forming a pattern Phase-shift mask and method for forming a pattern

2008-05-29

2010-10-12

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07811723

ABSTRACT:
A phase-shift mask for forming a pattern includes a glass substrate and a pattern, a first phase-shift region, a second phase-shift region and a third phase-shift region on the glass substrate. The first phase-shift region and the second phase-shift region are alternately arranged and the third phase-shift regions are formed at the terminal ends of the first phase-shift region.

REFERENCES:
patent: 6165692 (2000-12-01), Kanai et al.
patent: 2006/0099518 (2006-05-01), Tan et al.

Affiliated with

Also associated with

Rating

Phase-shift mask and method for forming a pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase-shift mask and method for forming a pattern, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase-shift mask and method for forming a pattern will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4183465