Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-07-08
2010-11-23
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S005000, C365S100000, C365S163000
Reexamination Certificate
active
07838862
ABSTRACT:
A phase random access memory including a plurality of access transistors, each access transistor including a drain region and a phase-changeable film shared by the plurality of access transistors. The phase-changeable film is connected to a bitline through a first electrode and connected to each respective drain region through at least one of a plurality of second electrodes.
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Cho Beak-Hyung
Cho Woo-Yeong
Kim Du-Eung
Oh Hyung-Rok
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
Taylor Earl N
Vu David
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