Phase random access memory with high density

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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Details

C257S003000, C257S005000, C365S100000, C365S163000

Reexamination Certificate

active

07838862

ABSTRACT:
A phase random access memory including a plurality of access transistors, each access transistor including a drain region and a phase-changeable film shared by the plurality of access transistors. The phase-changeable film is connected to a bitline through a first electrode and connected to each respective drain region through at least one of a plurality of second electrodes.

REFERENCES:
patent: 6500706 (2002-12-01), Chi
patent: 6740921 (2004-05-01), Matsuoka et al.
patent: 6750469 (2004-06-01), Ichihara et al.
patent: 2003/0002312 (2003-01-01), Lowrey
patent: 2003/0003647 (2003-01-01), Dennison et al.
patent: 2003/0003691 (2003-01-01), Dennison et al.
patent: 2003/0086291 (2003-05-01), Lowrey
patent: 2003/0111679 (2003-06-01), Kuge
patent: 2003/0146469 (2003-08-01), Matsuoka et al.
patent: 2003/0186481 (2003-10-01), Lung
patent: 2003/0209746 (2003-11-01), Horii
patent: 2005/0111247 (2005-05-01), Takaura et al.
patent: 2004-349504 (2004-12-01), None
patent: WO03073512 (2003-09-01), None

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