Phase mask laser fabrication of fine pattern electronic intercon

Details Phase mask laser fabrication of fine pattern electronic intercon Phase mask laser fabrication of fine pattern electronic intercon

1996-08-27

1998-11-24

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438623, 438662, 438795, 438949, H01L 2128

Patent

active

058406220

ABSTRACT:
Phase mask laser machining procedures for fabricating high density fine pattern feature electrical interconnection structures. Conductor patterns are fabricated using a phase mask laser patterned dielectric layer as a conductor wet etch masking layer, or by subtractively removing metal using holographic phase mask laser micromachining. In accordance with the present invention, a substrate is provided, a first layer of dielectric material is formed on the substrate, a metal layer is formed on the first layer of dielectric material, and a second layer of dielectric material is then formed on the metal layer. A phase mask is disposed above the second layer of dielectric material that has a predefined phase pattern therein defining a metal conductor pattern that corresponds to an interconnect structure. The second layer of dielectric material is then processed using the phase mask to form the interconnect structure. In a first procedure, the second layer of dielectric material is irradiated through the phase mask using laser energy to remove portions of the second layer of dielectric material and expose the metal layer to define the metal conductor pattern and to provide a dielectric etch mask. Then, the exposed metal layer is wet etched using the dielectric etch mask to form the interconnect structure. A second procedure provides for irradiating the second layer of dielectric material with laser energy through the phase mask to remove portions of the second layer of dielectric material to define a metal conductor pattern. Then, a second metal layer is electrolessly plated, or chemical vapor deposited, in the metal conductor pattern on the exposed surface of the second layer of dielectric material to form the interconnect structure. In a third procedure, the first layer of dielectric material is formed on the substrate, the metal layer is formed thereon, and the phase mask is disposed above the metal layer. The conductor pattern is then directly etched in the metal layer using a laser and the phase mask.

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A. H. Smith, "Phase Mask Machining for High Throughput Via Formation", ICEMM Proceedings '93, pp. 208-213, from Denver Conference, Apr. 16, 1993.

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